PNZ1270 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ1270
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : t_r = 2.5 µs (typ.)
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
V_ECO
I_C
P_C
20
V
5
V
20
mA
50
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
Unit : mm
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
1
2
1.8 2.8±0.2 1.8
R0.9
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
1 100 nA
Collector photo current
I_CE(L)*3 V_CE = 10V, L = 1000 lx^*1
0.8
19.2 mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
14
deg.
Rise time
Fall time
t_r*2
t_f*2
V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
2.5
3.5
µs
µs
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 _{ICE(L) Classifications}
Class
Q
I_CE(L) (mA)
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
1