PNZ126S Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ126S
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : t_r = 2.5 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_ECO
I_C
P_C
T_opr
5
V
20
mA
50
mW
–25 to +85 ˚C
T_stg –30 to +100 ˚C
ø3.0±0.2
Unit : mm
,,Color indication ICE(L) rank
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
1 100 nA
Collector photo current
I_CE(L)*3 V_CE = 10V, L = 1000 lx^*1
1050
2560 µA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
30
deg.
Rise time
Fall time
t_r*2
t_f*2
V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
2.5
3.5
µs
µs
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 _{ICE(L) Classifications}
Class
Q
R
S
T
U
I_CE(L) (µA) 1050 to1350 1260 to 1580 1480 to 1860 1730 to 2180 2030 to 2560
Color indication
Brown
Yellow
Pink
Black
Red
1