PNZ121S Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ121S
Silicon NPN Phototransistor
For optical control systems
Features
Stable operations in high illuminance region
Low dark current
Fast response : t_r = 1 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
V_ECO
I_C
P_C
20
V
5
V
10
mA
50
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
ø3.0±0.2
Unit : mm
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
1 100 nA
Collector photo current
I_CE(L)*3 V_CE = 10V, L = 1000 lx^*1
120
280 µA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
30
deg.
Rise time
Fall time
t_r*2
t_f*2
V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
1
1.3
µs
µs
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
V_CC
(Input pulse)
50Ω_,,,,
,, ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
*3 _{ICE(L) Classifications}
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Class
I_CE(L) (µA)
Color indication
Q
120 to180
Black
R
160 to 200
Red
S
180 to 235
Green
T
210 to 280
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