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PNZ120S Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For optical control systems
Phototransistors
PNZ120S (PN120S)
Silicon planar type
For optical control systems
φ3.0±0.15
Unit: mm
■ Features
• High sensitivity
• Wide directivity characteristics for easy use
• Fast response: tr , tf = 3 µs (typ.)
• Signal mixing capability using base pin
• Small size (φ3) ceramic package
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (Base open) VCEO
30
V
Emitter-collector voltage (Base open) VECO
5
V
Collector current
IC
20
mA
Collector power dissipation
PC
50
mW
Operating ambient temperature
Topr −25 to +85 °C
Storage temperature
Tstg −30 to +100 °C
φ0.3±0.05
φ0.45±0.05
0.9±0.15
12
1: Collector
2: Emitter
CTRLR102-001 Package
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Photocurrent *1, *2
ICE(L)1 VCE = 10 V, L = 2 lx
3
µA
ICE(L)2 VCE = 10 V, L = 500 lx
1.0
mA
Dark current
ICEO VCE = 10 V
5 500 nA
Peak emission wavelength
Half-power angle
λp
VCE = 10 V
θ The angle from which photocurrent
800
nm
50
°
becomes 50%
Rise time *3
Fall time *3
Collector-emitter saturation voltage *1
tr
tf
VCE(sat)
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω
ICE(L) = 1 mA, L = 1 000 lx
3
µs
3
µs
0.2 0.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
QL
RL
SL
Q
R
S
ICE(L)1
ICE(L)2
3 to 16
5 typ.
10 to 30
6 typ.
>24



8 typ.
1.0 to 5.0
4.0 to 9.0
>7.0
*3: Switching time measurement circuit
Sig. in
50 Ω
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
tr: Rise time
90% tf: Fall time
10%
tr
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00014BED
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