PNZ109F Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ109F
Silicon NPN Phototransistor
For optical control systems
Features
Flat window design which is suited to optical systems
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices : λ_p = 900 nm (typ.)
Fast response : t_r = 8 µs (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_CBO
30
V
V_ECO
3
V
V_EBO
I_C
P_C
T_opr
T_stg
5
V
30
mA
150
mW
–25 to +85 ˚C
–30 to +100 ˚C
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
1.0_±0.2
1.0^±0.15
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.05 2
µA
Collector photo current
I_CE(L) V_CE = 10V, L = 100 lx^*1
0.3
mA
Peak sensitivity wave length
λ_P
V_CE = 10V
900
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
40
deg.
Rise time
Fall time
Collector saturation voltage
t_r*2
t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 1mA
R_L = 100Ω
I_CE(L) = 1mA, L = 1000 lx^*1
8
µs
9
µs
0.3 0.6 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω_,,,,
V_CC
(Input pulse)
,, Sig.OUT
R_L
(Output pulse)
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
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