PNZ108CL Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ108CL
Silicon NPN Phototransistor
For optical control systems
Unit : mm
Features
High sensitivity : I_CE(L) = 3.5 mA (min.) (at L = 500 lx)
Wide directional sensitivity for easy use
Fast response : t_r = 5 µs (typ.)
Signal mixing capability using base pin
Small size (low in height) package
3-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_CBO
V_ECO
V_EBO
I_C
P_C
30
V
3
V
5
V
20
mA
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
3
1
2
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
I_CEO
I_CE(L)*3
V_CE = 10V
V_CE = 10V, L = 500 lx^*1
0.05 2
µA
3.5 6
mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
900
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
80
deg.
Rise time
t_r*2
V_CC = 10V, I_CE(L) = 5mA
5
µs
Fall time
Collector saturation voltage
t_f*2
V_CE(sat)
R_L = 100Ω
I_CE(L) = 1mA, L = 1000 lx^*1
6
µs
0.3 0.6 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
, , ^50Ω
R_L
t_d
t_r
,,, , _{*3 ICE(L) Classifications}
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Class
I_CE(L) (mA)
Q
3.5 to 6.0
R
5.0 to 9.1
S
> 7.5
Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).
1