PNZ107F Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistors

Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : t_r = 8 µs (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
PNZ107F
ø4.6±0.15
Unit : mm
Glass window
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* _{PNZ108F only}
Symbol Ratings Unit
V_CEO
20
V
V_CBO*
30
V
V_ECO
3
V
V_EBO*
5
V
I_C
30
mA
P_C
150
mW
T_opr
–25 to +85 ˚C
T_stg –30 to +100 ˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ108F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1