PNZ107 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN Phototransistors

Phototransistors
PNZ107, PNZ108 (PN107, PN108)
Silicon NPN Phototransistors
For optical control systems
PNZ107
4.6 0.15
Unit : mm
Glass lens
Features
High sensitivity : I_CE(L) = 5 mA (min.) (at L = 100 lx)
Narrow directional sensitivity for effective use of light input
Fast response : t_r = 5 µs (typ.)
Signal mixing capability using base pin (PNZ0108)
TO-18 standard type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* _{PNZ108 only}
Symbol Ratings Unit
V_CEO
20
V
V_CBO*
30
V
V_ECO
3
V
V_EBO*
5
V
I_C
30
mA
P_C
150
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
2- 0.45 0.05
2.54 0.25
0.15
1.0
1.0
0.2
21
5.75 max.
1: Emitter
2: Collector
PNZ108
4.6 0.15
Unit : mm
Glass lens
3- 0.45 0.05
2.54 0.25
1.0
0.2
0.15
1.0
3
21
5.75 max.
1: Emitter
2: Base
3: Collector
Note) The part numbers in the parenthesis show conventional part number.
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