PNZ106 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNZ106 (PN106)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t_r = 3.5 µs (typ.)
Narrow directional sensitivity for effective use of light input
Signal mixing capability using base pin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
30
V
V_CBO
40
V
V_ECO
5
V
V_EBO
5
V
I_C
20
mA
P_C
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
ø4.6±0.15
Unit : mm
Glass lens
3-ø0.45±0.05
2.54±0.25
1.0_±0.2
1.0^±0.15
3
21
ø5.75 max.
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
I_CEO V_CE = 10V
I_CE(L) V_CE = 10V, L = 100 lx^*1
0.3
λ_P
V_CE = 10V
θ
Measured from the optical axis to the half power point
1 100 nA
0.6
mA
800
nm
10
deg.
Rise time
Fall time
Collector saturation voltage
t_r*2
t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
I_CE(L) = 1 mA, L = 1000 lx^*1
3.5
µs
5.0
µs
0.2 0.4 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1