PNZ0334 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – PIN Photodiode For optical fiber communication systems

PIN Photodiodes
PNZ0334
PIN Photodiode
For optical fiber communication systems
Features
Plastic type package (ø 5)
High coupling capability suitable for plastic fiber
High quantum efficiency
High-speed response
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_R
30
V
P_D
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
ø4.8±0.2
ø4.4±0.2
C0.2
Unit : mm
0.8
0.6
2-0.8 max.
2- 0.6±0.1
2.54
21
1: Anode
2: Cathode
Dimensions of detection area
Unit : mm
1.0
0.86
Active region
A1
ø0.1
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_D
V_R = 10V
0.1 10 nA
Photo current
I_L
V_R = 10V, L = 1000 lx^*1
5
7
µA
Peak sensitivity wavelength
λ_P
V_R = 10V
850
nm
Response time
t_r, t_f*2 V_R = 10V, R_L = 50Ω
2
ns
Capacitance between pins
C_t
V_R = 0V, f = 1MHz
6
pF
Acceptance half angle
θ
Measured from the optical axis to the half power point
70
deg.
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
λ_P = 900nm
,,, ^50Ω
V_R = 10V
(Input pulse)
Sig.OUT
,,^RL
(Output pulse)
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1