PNZ0300 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PIN Photodiodes

PIN Photodiodes
PNZ300 (PN300), PNZ300F (PN300F)
Silicon planar type
PAZ300
φ4.6±0.15
Unit: mm
Glass lens
For optical control systems
■ Features
• Fast response which is well suited to high speed modulated light
detection
• Wide spectral sensitivity
• Low dark current and low noise
• Good photo current linearity and wide dynamic sensitivity
• Narrow directivity (PNZ300)
• Wide derectivity (PNZ300F)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
V_R
50
V
P_D
100
mW
T_opr −25 to +85 °C
T_stg −30 to +100 °C
PAZ300F
2-φ0.45±0.05
1.0^±0.15
2.54±0.25
1.0_±0.2
21
φ5.75 max.
1: Anode
2: Cathode
MTGLR102-001 Package
φ4.6±0.15
Unit: mm
Glass window
2-φ0.45±0.05
2.45±0.25
1.0^±0.15
1.0_±0.2
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
21
1: Anode
φ5.75 max.
2: Cathode
MTGFR102-001 Package
Parameter
Symbol
Conditions
Min Typ Max Unit
Dark current
Photocurrent ^*1
I_D
PNZ300
I_L
PNZ300F
V_R = 10 V
V_R = 10 V, L = 1 000 lx
0.1 10
nA
30 55
µA
5
7
Peak emission wavelength
Rise time ^*2
Fall time ^*2
Terminal capacitance
Half-power angle
PNZ300
λ_p
V_R = 10 V
t_r
V_R = 20 V, R_L = 50 Ω
t_f
C_t
V_R = 10 V, f = 1 MHz
θ The angle from which photocurrent
800
nm
1
ns
1
ns
7
pF
10
°
PNZ300F
becomes 50%
40
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. _*1: Source: Tungsten (color temperature 2 856 K)
*2: ^{Switching time measurement circuit}
Sig. in
λ_P = 900 nm
50 Ω
V_R
(Input pulse)
Sig. out
(Output pulse)
R_L
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHE00030BED
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