PNA4S11M Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Bipolar Integrated Circuit with Photodetection Function

Photo IC
PNA4S11M Series
(PNA4S11M/4S12M/4S13M/4S14M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mounting type for reflow soldering
Space saved by miniaturization
Ready for automatic mounting
Unit : mm
5.2
(2.6)
3.47
1
2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CC – 0.5 to +7 V
P_D
200
mW
T_opr
–20 to +60
˚C
T_stg
– 30 to +70 ˚C
R1.7
3
4
1: V_O
2: V_CC
3: GND
4: GND
Main Characteristics (Ta = 25˚C V_CC = 5V)
Parameter
Symbol
Conditions
min typ max Unit
Operating supply voltage
Current consumption
Maximum reception distance
Low-level output voltage
High-level output voltage
Low-level pulse width
High-level pulse width
PNA4S11M
V_CC
I_CC
L_max*1
V_OL*2
V_OH
T_WL*1
T_WH*1
No signal condition
L≤7.0m, 10L=400µA
No signal condition
L=7.0m, 16Pulse
L=7.0m, 16Pulse
4.7 5.0 5.3 V
1.8 2.4 3.0 mA
7.0
m
0.35 0.5 V
4.8 5.0 V_CC
V
200 400 600 µs
200 400 600 µs
36.7
PNA4S12M
Carrier frequency
PNA4S13M
f₀
38.0
kHz
40.0
PNA4S14M
56.9
*1 _{Fig.1 burst wave, L=Lmax, 16 pulses}
*2 _{Fig.2 continuous wave, L≤Lmax}
Carrier wave : f_o
Carrier wave : f_o
400µs
400µs
Fig.1
Fig.2
1