PNA4S01M Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Bipolar Integrated Circuit with Photodetection Function

Photo IC
PNA4S01M Series
(PNA4S01M/4S02M/4S03M/4S04M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
Surface-mouting type for reflow soldering
Metal shieldless
Space saved by miniaturization
Ready for automatic mounting
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CC – 0.5 to +7 V
P_D
200
mW
T_opr
–20 to +60
˚C
T_stg
– 30 to +70 ˚C
Unit : mm
5.2
(2.6)
3.47
1
2
R1.7
3
4
1: V_O
2: V_CC
3: GND
4: GND
Main Characteristics (Ta = 25˚C V_CC = 5V)
Parameter
Symbol
Conditions
min typ max Unit
Operating supply voltage V_CC
Current consumption
I_CC
Maximum reception distance L_max*1
Low-level output voltage V_OL*2
High-level output voltage V_OH
Low-level pulse width
T_WL*1
High-level pulse width
T_WH*1
PNA4S01M
No signal condition
L≤5.0m, 10L=400µA
No signal condition
L=5.0m, 16Pulse
L=5.0m, 16Pulse
4.7 5.0 5.3 V
1.8 2.4 3.0 mA
5.0
m
0.35 0.5 V
4.8 5.0 V_CC
V
200 400 600 µs
200 400 600 µs
36.7
PNA4S02M
Carrier frequency
PNA4S03M
f₀
38.0
kHz
40.0
PNA4S04M
56.9
*1 _{Fig.1 burst wave, L=Lmax, 16 pulses}
*2 _{Fig.2 continuous wave, L≤Lmax}
Carrier wave : f_o
Carrier wave : f_o
400µs
400µs
Fig.1
Fig.2
1