PNA4611M Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Bipolar Integrated Circuit with Photodetection Function

Photo IC
PNA4611M Series
(PNA4611M/4612M/4613M/4614M/4620M)
Bipolar Integrated Circuit with Photodetection Function
For infrared remote control systems
Features
High sensitivity (extension distance is 11 m or more)
External parts not required
Resin to cutoff visible light is used
Supports various metal holders with improved electromagnetic
noise resistance
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CC – 0.5 to +7 V
P_D
200
mW
T_opr
–20 to +75
˚C
T_stg – 40 to +100 ˚C
Main Characteristics (Ta = 25˚C V_CC = 5V)
Parameter
Symbol
Conditions
Operating supply voltage V_CC
Current consumption
I_CC
Maximum reception distance L_max
Low-level output voltage V_OL
High-level output voltage V_OH
Low-level pulse width
T_WL
High-level pulse width
T_WH
PNA4611M
Note 3
Note 1
Note 2
Note 3
Note 1
Note 1
PNA4612M
Carrier frequency PNA4613M f₀
PNA4614M
PNA4620M
Note 1) Fig.1 burst wave, L=L_max, 16 pulses
Note 2) Fig.2 continuous wave, L ≤ L_max
Note 3) Light shut off condition
Carrier wave : f₀
7.0±0.2
3.5
Unit : mm
5.25±0.3
2.25
R2.25±0.1
2.0±0.1
3-1.5±0.2
3-0.5
+0.2
–0.15
1.0±0.1
0.45±0.2
123
2-2.54
1: V_OUT
2: GND
3: V_CC
min typ max Unit
4.7 5.0 5.3 V
1.8 2.4 3.0 mA
11 16
m
0.35 0.5 V
4.8 5.0 V_CC V
200 400 600 µs
200 400 600 µs
36.7
38.0
40.0
kHz
56.9
33.3
Carrier wave : f₀
400µs
400µs
Fig.1
Fig.2
1