PNA3W01L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type For optical control systems

PIN Photodiodes
PNA3W01L (PN307)
Silicon planar type
For optical control systems
■ Features
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
diodes: λ_p = 800 nm (typ.)
• Double end type small size package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
V_R
30
V
P_D
10
mW
T_opr −25 to +85 °C
T_stg −30 to +100 °C
Unit: mm
1
45^°
Type number : cathode mark (Purple)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
(φ1.8)
2
(1.8) 2.8±0.2 (1.8)
R0.9
1: Cathode
2: Anode
LTTLW102-001 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Dark current
Photocurrent ^*1
Peak emission wavelength
Rise time ^*2
Fall time ^*2
Rise time ^*2
Fall time ^*2
Half-power angle
Symbol
I_D
I_L
λ_p
t_r
t_f
t_r
t_f
θ
Conditions
V_R = 10 V
V_R = 10 V, L = 1 000 lx
V_R = 10 V
V_R = 10 V, R_L = 1 kΩ
V_R = 10 V, R_L = 100 kΩ
The angle from which photocurrent
becomes 50%
Min Typ Max Unit
50
nA
5
µA
800
nm
50
ns
50
ns
5
µs
5
µs
24
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. _*1: Source: Tungsten (color temperature 2 856 K)
*2: ^{Switching time measurement circuit}
Sig. in
λ_P = 800 nm
50 Ω
V_CC
(Input pulse)
Sig. out
(Output pulse)
R_L
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00029BED
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