PNA2803M Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Darlington Phototransistor

Darlington Phototransistors
PNA2803M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_ECO
5
V
I_C
30
mA
P_C
100
mW
T_opr
–25 to +80
˚C
T_stg –30 to +100 ˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
I_CEO
I_CE(L)*3
V_CE = 10V
V_CE = 10V, L = 2 lx^*1
0.5 µA
0.05
1.5 mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
850
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
30
deg.
Response time
t_r, t_f*2 V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
150
µs
Collector saturation voltage V_CE(sat) I_CE(L) = 1mA, L = 100 lx^*1
0.7 1.5 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
Sig.OUT
,,^RL
(Output pulse)
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 _{ICE(L) Classifications}
Class
Q
I_CE(L) (mA) 0.05 to 0.25
R
0.18 to 0.8
S
0.7 to 1.5
1