PNA2602M Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Darlington Phototransistor

Darlington Phototransistors
PNA2602M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Long lead and visible light cutoff design with PN205
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
V_ECO
I_C
P_C
T_opr
T_stg
20
V
5
V
30
mA
100
mW
–25 to +80 ˚C
–30 to +100 ˚C
ø3.5±0.2 ^4.5±0.3
Unit : mm
4.2±0.3
2.3
1.9
2-1.12
1.2
2-0.45±0.15
2-0.4±0.15
2-0.6±0.15
2-0.45±0.15
12
2.54
R1.75
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
Sensitivity to infrared emitters S_IR*1 V_CE = 10V, H = 3.75 µW/cm²
0.1
0.5 µA
3.0 mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
850
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
35
deg.
Response time
t_r, t_f*2 V_CC = 10V, I_C = 1mA, R_L = 100Ω
Collector saturation voltage V_CE(sat)*1 I_C = 100µA, H = 3.75 µW/cm²
150
µs
1.5 V
*1 _{Measurements were made using infrared light (λ = 940 nm) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1