PNA2602 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Darlington Phototransistor

Darlington Phototransistors
PNA2602
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
20
V
V_ECO
I_C
P_C
T_opr
T_stg
5
V
30
mA
100
mW
–25 to +80 ˚C
–30 to +100 ˚C
4.5±0.3
ø3.5±0.2
Unit : mm
4.2±0.3
2.3 1.9
2-0.98±0.2
2-0.45±0.15
0.45±0.15
2.54
1.2
R1.75
12
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.1 0.5 µA
Collector photo current
I_CE(L) V_CE = 10V, L = 2 lx^*1
0.2 1
mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
35
deg.
Response time
Collector saturation voltage
t_r, t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 5mA, R_L = 100Ω
I_CE(L) = 1mA, L = 100 lx^*1
100
µs
0.7 1.5 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1