PNA1801L Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNA1801L (PN168)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Small size, high output power, low cost
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol Ratings Unit
V_CEO
30
V
V_ECO
5
V
I_C
20
mA
P_C
100
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
ø3.8±0.2
ø3.0±0.2
Unit : mm
2-0.8 max.
2-0.5±0.1
2
1
2.54
0.5±0.1
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
I_CEO
I_CE(L)
V_CE = 10V
V_CE = 10V, L = 500 lx^*1
0.005 0.5 µA
0.8 3
mA
Peak sensitivity wavelength
λ_P
V_CE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
35
deg.
Response time
Collector saturation voltage
t_r, t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 1mA, R_L = 100Ω
I_CE(L) = 1mA, L = 1000 lx^*1
4
µs
0.2 0.5 V
*1 _{Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT
R_L
(Output pulse) _td
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
1