PNA1605F Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type

Phototransistors
PNA1605F (PN116)
Silicon planar type
For optical control systems
■ Features
• High sensitivity
• Wide directivity characteristics, suited for detecting GaAs LEDs:
θ = 70° (typ.)
• Fast response: t_r , t_f = 8 µs (typ.)
• Side-view type package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-emitter voltage (Base open) V_CEO
20
V
Collector-base voltage (Emitter open) V_CBO
30
V
Emitter-collector voltage (Base open) V_ECO
5
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
10
mA
Collector power dissipation
P_C
100
mW
Operating ambient temperature
T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
4.5±0.15
3.5±0.15
Unit: mm
2.1±0.15
1.6±0.15
0.8±0.1
3-0.45±0.2
0.45±0.2
1.27
1.27
1 23
1: Emitter
2: Collector
3: Base
LSTFR103-001 Package
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Photocurrent ^*1
I_CE(L) V_CE = 10 V, L = 100 lx
0.2 0.8
mA
Dark current
I_CEO V_CE = 10 V
0.05 2.00 µA
Peak emission wavelength
Half-power angle
λ_p
V_CE = 10 V
θ The angle from which photocurrent
900
nm
70
°
becomes 50%
Rise time ^*2
Fall time ^*2
Collector-emitter saturation voltage ^*1
t_r
t_f
V_CE(sat)
V_CC = 10 V, I_CE(L) = 1 mA, R_L = 100 Ω
I_CE(L) = 1 mA, L = 1 000 lx
8
µs
9
µs
0.3 0.6
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Source: Tungsten (color temperature 2 856 K)
*2: ^{Switching time measurement circuit}
Sig. in
50 Ω
V_CC
Sig. out
R_L
(Input pulse)
t_d: Delay time
(Output pulse)
t_d
t_r
90%
10%
t_f
t_r: Rise time
t_f: Fall time
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHE00003BED
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