PNA1601M Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Ultraminiature, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Collector to emitter voltage V_CEO
20
V
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
I_C
20
mA
P_C
50
mW
T_opr
–25 to +65
˚C
T_stg
–30 to +85 ˚C
2.6±0.2
C0.5 0.8
R0.55
Unit : mm
1.4±0.2
1.2±0.2
(0.4)
2-0.7
2-0.45
0.15
2
1
2.0
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO V_CE = 10V
0.2 µA
Sensitivity to infrared emitters S_IR*1 V_CE = 10V, H = 15µW/cm²
3
µA
Peak sensitivity wavelength
λ_P
V_CE = 10V
850
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
35
deg.
Rise time
Fall time
Collector saturation voltage
t_r*2
t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 5mA
R_L = 100Ω
I_CE(L) = 10µA, H = 15µW/cm²
4
µs
4
µs
0.5 V
*1 _{Measurements were made using infrared light (λ = 940 nm) as a light source.}
*2 _{Switching time measuring circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
Note) The part number in the parenthesis shows conventional part number.
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