PNA1401LF Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN Phototransistors

Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Low dark current : I_CEO = 5 nA (typ.)
Fast response : t_r, t_f = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
PNA1401LF
Unit : mm
ø4.6±0.15 _{Glass window}
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* _{PNZ102F only}
Symbol Ratings Unit
V_CEO
30
V
V_CBO*
40
V
V_ECO
5
V
V_EBO*
5
V
I_C
50
mA
P_C
150
mW
T_opr
–25 to +85
˚C
T_stg –30 to +100 ˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ102F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1