PN163NC Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN Phototransistor

Phototransistors
PN163NC
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Fast response : t_r = 4 µs (typ.)
Adoption of visible light cutoff resin
Ultraminiature, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
V_CEO
I_C
P_C
T_opr
T_stg
20
V
20
mA
50
mW
–25 to +85 ˚C
–30 to +100 ˚C
3.0±0.3
Unit : mm
1.95±0.25
ø1.1 _0.9
R0.5
1.4±0.2
0.5
2-0.5±0.15
0.3±0.15
2
1
2.54
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
I_CEO
Sensitivity to infrared emitters S_IR*1
V_CE = 10V
V_CE = 10V, H = 15µW/cm²
0.2 µA
6
40 µA
Peak sensitivity wavelength
λ_P
V_CE = 10V
850
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
25
deg.
Rise time
Fall time
Collector saturation voltage
t_r*2
t_f*2
V_CE(sat)
V_CC = 10V, I_CE(L) = 5mA
R_L = 100Ω
I_CE(L) = 3µA, H = 15µW/cm²
4
µs
4
µs
0.5 V
*1 _{Measurements were made using infrared light (λ = 940 nm) as a light source.}
*2 _{Switching time measurement circuit}
Sig.IN
50Ω
V_CC
(Input pulse)
Sig.OUT _{(Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1