ON2152 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Reflective photosensor

Reflective Photosensors (Photo Reflectors)
CNZ2152 (ON2152)
Reflective photosensor
Non-contact point SW, object sensing
■ Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Mark for
indicating
LED side
φ1.5
Unit: mm
16.0±0.3
14.0
+0.1
-0.2
φ2.2±0.2
■ Features
• Fast response
• High sensitivity
• High SN ratio
■ Applications
• Detection of paper, film and cloth • Optical mark reading
• Detection of coin and bill
• Detection of position and edge
• Start, end mark detection of magnetic tape
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
Power dissipation ^*1
I_F
100
mA
P_D
150
mW
Output (Photo Collector-emitter voltage V_CEO
20
V
transistor) (Base open)
(10.0)
φ0.9^+-00..21
4-φ0.45
(2.54)
2
3
1: Cathode
2: Anode
3: Emitter
1
4
4: Collector
PRSTR104-001 Package
(Note) ( ) Dimension is reference
Emitter-collector voltage V_ECO
3
V
(Base open)
Collector current
I_C
30
mA
Collector power dissipation ^*2 P_C
150
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
Note) *1: Input power derating ratio is
2.0 mW/°C at T_a ≥ 25°C.
*2: Output power derating ratio is
2.0 mW/°C at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Output
Collector-emitter cutoff current I_CEO
characteristics (Base open)
I_F = 100 mA
V_R = 5 V
V_CE = 10 V
Transfer Collector current ^*1
I_C ^*2
characteristics
I_C ^*3
Collector-emitter saturation voltage V_CE(sat)
Rise time
t_r
V_CC = 5 V, I_F = 20 mA, R_L = 100 Ω
I_F = 100 mA, I_C = 1 mA
V_CC = 10 V, I_C = 1 mA, R_L = 100 Ω
Fall time
t_f
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. _*1: Output current measurement circuit (Ambient light is shut off completely)
Min Typ Max Unit
1.25 1.50 V
10 µA
0.05 2.00 µA
0.8 3.0
mA
500
µA
0.6 V
8
µs
8
µs
I_F
I_C ^VCC
d = 5 mm ^{*2: White paper (reflective ratio 90%)}
*3: Tracing paper (paper SM-1 for 2nd original paper)
R_L
Test Paper
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00052BED
1