ON1113 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Transmissive Photosensors (Photo lnterrupters)

Transmissive Photosensors (Photo lnterrupters)
CNA1011K (ON1113)
Photo lnterrupter
For contactless SW, object detection
Mark for indicating
LED side φ1.5
Unit: mm
■ Overview
CNA1011K is a small size photocoupler package consisting of a
high efficiency GaAs infrared light emitting diode used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element.
■ Features
13.6
A
7.0±0.2
5.0±0.2
0.4
Device
center
19.2
13.0±0.15
0.45±0.15
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
thick plate detection
• Fast response: t_r , t_f = 6 µs (typ.)
• Small output current variation against change in temperature
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
A'
(10.1)
4- 0.45
2-2.0
2-φ3.2±0.2
(2.54)
SEC. A-A'
2
3
1: Anode
2: Cathode
3: Collector
1
4
4: Emitter
PISTR104-012 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Emitter-collector voltage V_ECO
5
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
100
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
Note) _*1: Input power derating ratio is 1.0 mW/°C at
T_a ≥ 25°C.
*2: ^{Output power derating ratio is 1.34 mW/°C}
at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Terminal capacitance
C_t
Output
Collector-emitter cutoff current I_CEO
characteristics _{(Base open)}
Collector-emitter capacitance C_C
Transfer Collector current
I_C
characteristics Collector-emitter saturation voltage V_CE(sat)
Rise time ^*
t_r
Fall time ^*
t_f
I_F = 50 mA
V_R = 3 V
V_R = 0 V, f = 1 MHz
V_CE = 10 V
V_CE = 10 V, f = 1 MHz
V_CC = 10 V, I_F = 20 mA, R_L = 100 Ω
I_F = 50 mA, I_C = 0.1 mA
V_CC = 10 V, I_C = 1 mA
R_L = 100 Ω
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Min Typ Max Unit
1.2 1.5 V
10 µA
35
pF
200 nA
5
pF
0.3
mA
0.5 V
6
µs
6
µs
Sig. in
50 Ω
V_CC
Sig. out
R_L
(Input pulse)
(Output pulse)
t_r : Rise time
90% ^tf ^{: Fall time}
10%
t_r
t_f
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00018BED
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