ON1105 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Photo Interrupter

Transmissive Photosensors (Photo Interrupters)
ON1105
Photo Interrupter
For contactless SW, object detection
Outline
ON1105 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Fast response : t_r, t_f = 6 µs (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 30
V
transistor)
Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2 100 mW
Temperature ^{Operating ambient temperature Topr –25 to +85 ˚C}
Storage temperature
T_stg –30 to +100 ˚C
Unit : mm
Mark for indicating
LED side
25.0±0.35
14.3±0.3
Device
3.0±0.2
A
center
0.5±0.1
A'
,,,, ^{4- 0.45±0.2}
*10.0
+0.1
–0.4
*2.54±0.2
SEC. A-A'
19.0±0.2
2
3
2-ø3.2±0.2
1
4
2
3
1
4
Pin connection
(Note) * is dimension at the root of leads
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Forward voltage (DC)
Input
characteristics
Reverse current (DC)
Capacitance between terminals
V_F I_F = 50mA
I_R V_R = 3V
C_t V_R = 0V, f = 1MHz
Output Collector cutoff current
I_CEO V_CE = 10V
characteristics Collector to emitter capacitance C_C V_CE = 10V, f = 1MHz
Collector current
Transfer
Response time
characteristics
I_C V_CE = 10V, I_F = 20mA
t_r , t_f* V_CC = 10V, I_C = 1mA, R_L = 100Ω
Collector to emitter saturation voltage V_CE(sat) I_F = 50mA, I_C = 0.1mA
* _{Switching time measurement circuit}
min typ max Unit
1.2 1.5 V
10 µA
50
pF
200 nA
5
pF
0.3
mA
6
µs
0.3 V
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
,, ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1