OH10004 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – GaAs Hall Device

GaAs Hall Devices
OH10004
GaAs Hall Device
Magnetic sensor
I Features
• Hall voltage: typ. 150 mV (V_C = 6 V, B = 0.1 T)
• Input resistance: typ. 0.85 kΩ
• Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
• Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C
• Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
I Applications
• Various hall motor (VCR, phonograph, VD, CD, and FDD)
• Automotive equipment
• Industrial equipment
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol
Rating
Unit
Control voltage
Power dissipation
Operating ambient temperature
Storage temperature
V_C
12
V
P_D
150
mW
T_opr
−30 to +125
°C
T_stg
−55 to +125
°C
Unit : mm
0.65 ± 0.15
2.8
+
−
0.2
0.3
1.5 ± 0.2
0.65 ± 0.15
4
1
0.5 R
3
2
0 to 0.1
0.4 ± 0.2
0.4 ± 0.2
φ 1.0 ± 0.025
1 : V_H Output (−) side
2 : V_C Input (−) side
3 : V_H Output (+) side
4 : V_C Input (+) side
Mini Type Package (4-pin) with positioning projection
Marking Symbol: 4
I Electrical Characteristics T_a = 25°C
Parameter
Hall voltage^{*1, 4}
Unequilibrium ratio^{*2, 4}
Input resistance
Output resistance
Temperature coefficient of hall voltage
Symbol
V_H
V_HO/V_H
R_IN
R_OUT
β
Temperature coefficient of input
α
resistance
Linearity of hall voltage^*3
γ
Conditions
V_C = 6 V, B = 0.1 T
V_C = 6 V, B = 0 T/B = 0.1 T
I_C = 1 mA, B = 0 T
I_C = 1 mA, B = 0 T
I_C = 6 mA, B = 0.1 T
I_C = 1 mA, B = 0 T
I_C = 6 mA, B = 0.1 T/0.5 T
Min Typ Max Unit
130 150 170 mV
±12
%
0.50 0.85
kΩ
5
kΩ
−0.06 %/°C
0.3 %/°C
2
%
Note)
*1 : V_H =
V_H++V_H^−
2
*2 : Unequilibrium ratio is a percentage of V_HO with respect to V_H.
*3 : The linearity γ of V_H is a percentage of a difference between cumulative sensitivity of K_H1 and K_H5 which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
γ = ^KH5−KH1
1/2(K_H1+K_H5)
(the cumulative sensitivity K_H =
V_H
I_CɾB
)
*4 : V_H, V_HO/V_H rank classification
Class
HQ
HR
V_H (mV) 130 to 158 142 to 170
V_HO/V_H (%)
−5 to +5
Marking Symbol 4HQ
4HR
IQ
IR
130 to 158 142 to 170
+2 to +12
4IQ
4IR
KQ
KR
130 to 158 142 to 170
−2 to −12
4KQ
4KR
1