NP062A1 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Composite Transistors Silicon NPN epitaxial planar type

Composite Transistors
NP062A1
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Two elements incorporated into one package
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Basic Part Number
• UNR32A1 × 2
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
50
V
Collector-emitter voltage (Base open) V_CEO
50
V
Collector current
I_C
80
mA
Total power dissipation
P_T
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Note) _*: Measuring on substrate at 17 mm × 10 mm × 1 mm
0.12^+-00..0023
6
5
4
1
2
3
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Unit: mm
0 to 0.02
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 7Z
Internal Connection
654
Tr1
Tr2
■ Electrical Characteristics T_a = 25°C ± 3°C
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
50
Collector-emitter voltage (Base open) V_CEO I_C = 2 mA, I_B = 0
50
Collector-base cutoff current (Emitter open) I_CBO V_CB = 50 V, I_E = 0
0.1
Collector-emitter cutoff current (Base open) I_CEO V_CE = 50 V, I_B = 0
0.5
Emitter-base cutoff current (Collector open) I_EBO V_EB = 6 V, I_C = 0
0.5
Forward current transfer ratio
h_FE Ratio ^*
h_FE V_CE = 10 V, I_C = 5 mA
h_FE(Small/ V_CE = 10 V, I_C = 5 mA
35
0.5 0.99
Large)
Collector-emitter saturation voltage
V_CE(sat) I_C = 10 mA, I_B = 0.3 mA
0.25
Output voltage high level
V_OH V_CC = 5 V, V_B = 0.5 V, R_L = 1 kΩ
4.9
Output voltage low level
V_OL V_CC = 5 V, V_B = 2.5 V, R_L = 1 kΩ
0.2
Input resistance
R₁
−30% 10 +30%
Resistance ratio
R₁ / R₂
0.8 1.0 1.2
Transition frequency
f_T
V_CB = 10 V, I_E = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA


V
V
V
kΩ

MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Ratio between one and another
Publication date: June 2003
SJJ00271BED
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