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NP043A2 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) | |||
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Composite Transistors
NP043A2
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
â Features
⢠SSS-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
⢠Maximum package height (0.4 mm) contributes to develop thinner
equipments
â Basic Part Number
⢠UNR31A2 + UNR32A2
0.12+-00..0023
6
5
4
1
2
3
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
Unit: mm
0 to 0.02
â Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
VCBO
50
V
(Emitter open)
Collector-emitter voltage VCEO
50
V
(Base open)
Collector current
IC
80
mA
Tr2
Collector-base voltage
VCBO
â50
V
(Emitter open)
Collector-emitter voltage VCEO
â50
V
(Base open)
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC
â80
mA
PT
125
mW
Tj
125
°C
Tstg â55 to +125 °C
â Electrical Characteristics Ta = 25°C ± 3°C
⢠Tr1
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 7T
Internal Connection
654
22Rk1â¦
Tr1
22Rk2â¦
22Rk2⦠22Rk1⦠Tr2
123
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
60

Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kâ¦
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kâ¦
0.2
V
Input resistance
R1
â30% 22 +30% kâ¦
Resistance ratio
R1 / R2
0.8 1.0 1.2

Transition frequency
fT
VCB = 10 V, IE = â1 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
SJJ00285AED
1
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