MTMC8E2A0LBF Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Dual N-channel MOSFET For lithium-ion secondary battery protection circuit

MTMC8E2A0LBF
Dual N-channel MOSFET
For lithium-ion secondary battery protection circuit
MTMC8E2A0LBF
Unit: mm
 Features
 Low drain-source ON resistance:RDS(on)typ. = 15 mΩ (VGS = 4.5 V)
 Built-in gate resistor
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 4B
 Packaging
MTMC8E2A0LBF Embossed type (Thermo-compression sealing):
3 000 pcs / reel (standard)
 Absolute Maximum RatingsɹTa = 25 °C
Parameter
Symbol Rating
Drain-source Voltage
VDS
20
FET1 Gate-source Voltage
FET2 Drain Current
VGS
±12
ID
7.0
Peak Drain Current
Total Power Dissipation
Overall
Channel Temperature Range
IDp
42
PD1 ^*1
1.0
PD2 ^*1,*2
1.2
PD3 ^*3
0.4
Tch
150
Storage Temperature
Tstg -55 to +150
Note: *1 Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm Copper foil
of the drain portion should have a area of 300 mm ² or more
PD absolute maximum rating Non-heat sink: 400 mW
*2 t = 10 s
*3 Non-heat sink
Unit
V
V
A
A
W
°C
°C
1. Source(FET1)
2. Gate(FET1)
3. Source(FET2)
4. Gate(FET2)
5. Darin(FET1,2)
6. Darin(FET1,2)
7. Darin(FET1,2)
8. Darin(FET1,2)
Panasonic
JEITA
Code
WMini8-F1
SC-115
-
Internal Connection
8
7
65
FET 1
Rg
FET 2
Rg
1
2
3
4
Pin Name
1. Source(FET1) 5. Darin(FET1,2)
2. Gate(FET1) 6. Darin(FET1,2)
3. Source(FET2) 7. Darin(FET1,2)
4. Gate(FET2) 8. Darin(FET1,2)
Resistance
Value
Rg
1
kΩ
Publication date: October 2012
Ver. FED
1