MTM761230LBF Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon P-channel MOSFET For Switching

Doc No. TT4-EA-10073
Revision. 2
MTM761230LBF
Silicon P-channel MOSFET
For Switching
 Features
 Low drain-source On-state Resistance : RDS(on) typ. = 36 m  (VGS = -4 V)
 Low drive voltage : 2.5 V drive
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
 Marking Symbol :9C
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDS
-20
V
Gate to Source Voltage
VGS
10
V
Drain Current
ID
-3
A
Drain Current (Pulsed) ^*1
Total Power Dissipation ^*2
IDp
-16
A
PD
700
mW
Channel Temperature
Tch
150
C
Operating Ambient Temperature
Topr -40 to +85 C
Storage Temperature Range
Tstg -55 to +150 C
Note) *1 Pulse width  10 s, Duty cycle  1 %
*2 Measuring on ceramic board at 40 mm  38 mm  0.1 mm
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
Product Standards
MOS FET
MTM761230LBF
2.0
0.2
6
5
4
Unit : mm
0.13
1
2
3
0.7
(0.65)(0.65)
1.3
1. Drain
2. Drain
3. Gate
Panasonic
JEITA
Code
4. Source
5. Drain
6. Drain
WSMini6-F1-B
SC-113DA
―
Internal Connection
(D) (D) (S)
6
5
4
1
2
3
(D) (D) (G)
Pin Name
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
Established : 2007-11-07
Revised : 2013-06-18
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