MTM232230LBF Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon N-channel MOS FET

Doc No. TT4-EA-12901
Revision. 3
MTM232230LBF
Silicon N-channel MOS FET
For switching
 Features
 Low drain-source On-state resistance : RDS(on) typ = 20 m  (VGS = 4.0 V)
 Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
 Marking Symbol :BK
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
項目
記号
定格
単位
Drain-source Voltage
Gate-source Voltage
Drain current
Peak drain current ^*1
Power dissipation ^*2
Channel temperature
Operating ambient temperature
Storage Temperature Range
VDS
20
VGS
10
V
ID
4.5
A
IDp
18
A
PD
500
mW
Tch
150
C
Topr -40 to + 85
C
Tstg -55 to +150 C
Note) *1 Pulse width ≦10 s, Duty cycle ≦1 %
*2 Measuring on ceramic board at 40  38  0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
Product Standards
MOS FET
MTM232230LBF
2.0
0.3
3
Unit : mm
0.15
1
2
0.9
(0.65)(0.65)
1.3
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
SMini3-G1-B
SC-70
SOT-323
Internal Connection
(D)
3
1
2
(G)
(S)
Pin Name
1. Gate
2. Source
3. Drain
Established : 2010-12-15
Revised : 2013-07-01
Page 1 of 6