MTM231230L Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – Silicon P-channel MOSFET For Switching

Doc No. TT4-EA-14177
Revision. 2
MTM231232LBF
Silicon P-channel MOSFET
For Switching
MTM76123 in SMini3 type package
 Features
 Low Drain-source On-state Resistance : RDS(on) typ. = 40 m  (VGS = -4 V)
 Low Drive Voltage : 2.5 V Drive
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
 Marking Symbol :_BL
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDS
-20
V
Gate to Source Voltage
VGS
10
V
Drain Current
ID
-3
A
Drain Current (Pulsed) ^*1
Total Power Dissipation ^*2
IDp
-16
A
PD
500
mW
Channel Temperature
Tch
150
C
Storage Temperature Range
Tstg -55 to +150 C
Note *1 Pulse width  10 s, Duty cycle  1 %
*2 Measuring on ceramic board at 40 mm  38 mm  0.1 mm.
Absolute maximum rating PD Non-heat sink shall be made 150 mW.
Product Standards
MOS FET
MTM231232LBF
2.0
0.3
3
Unit : mm
0.15
1
2
0.9
(0.65)(0.65)
1.3
1. Gate
2. Source
3. Drain
Panasonic
JEITA
Code
SMini3-G1-B
SC-70
SOT-323
Internal Connection
Ｄ³
Ｇ1
ï¼³2
Pin Name
1. Gate
2. Source
3. Drain
Established : 2012-04-21
Revised : 2013-03-07
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