MSG43004 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – SiGe HBT type For low-noise RF amplifier

Transistors
MSG43004
SiGe HBT type
For low-noise RF amplifier
Unit: mm
■ Features
• Compatible between high breakdown voltage and high cut-off frequency
• Low noise, high-gain amplification
• Optimal size reduction and high level integration for ultra-small packages
3
2
1
1.00±0.05
0.39⁺_−^00..0013
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
9
V
Collector-emitter voltage (Base open) V_CEO
6
V
Emitter-base voltage (Collector open) V_EBO
1
V
Collector current
I_C
100
mA
Collector power dissipation ^*
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Note) _*: Copper plate at the collector is 5.0 mm² on substrate at 10 mm × 12
mm × 0.8 mm.
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: 5Y
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-base cutoff current (Emitter open) I_CBO
Collector-emitter cutoff current (Base open)
I_CEO
Emitter-base cutoff current (Collector open) I_EBO
Forward current transfer ratio
Transition frequency ^*
Forward transfer gain ^*
Noise figure ^*
h_FE
f_T
S_21e²
NF
Collector output capacitance
C_ob
(Common base, input open circuited) ^*
V_CB = 9 V, I_E = 0
V_CE = 6 V, I_B = 0
V_EB = 1 V, I_C = 0
V_CE = 3 V, I_C = 15 mA
V_CE = 3 V, I_C = 30 mA, f = 2 GHz
V_CE = 3 V, I_C = 30 mA, f = 2 GHz
V_CE = 3 V, I_C = 15 mA, f = 2 GHz
V_CB = 3 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
1
µA
1
µA
1
µA
100
220

17
GHz
6.0 9.0
dB
1.4 2.0
dB
0.6 0.9
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. _*: Verified by random sampling
Publication date: November 2004
SJC00320BED
1