MSG36E41 Datasheet, PDF (1/7 Pages) Panasonic Semiconductor – SiGe HBT type

Transistors
MSG36E41
SiGe HBT type
For low-noise RF amplifier
■ Features
• Compatible between high breakdown voltage and high cut-off frequency
• Low noise, high-gain amplification
• Two elements incorporated into one package (Each transistor is separated)
• Reduction of the mounting area and assembly cost by one half
0.12^+-00..0023
6
5
4
Unit: mm
0 to 0.02
■ Basic Part Number
• MSG33004 + MSG33001
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Tr1
Collector-base voltage
V_CBO
9
V
(Emitter open)
Collector-emitter voltage V_CEO
6
V
(Base open)
Emitter-base voltage
V_EBO
1
V
(Collector open)
Collector current
I_C
100
mA
Tr2
Collector-base voltage
V_CBO
9
V
(Emitter open)
Collector-emitter voltage V_CEO
6
V
(Base open)
Emitter-base voltage
V_EBO
1
V
(Collector open)
Overall
Collector current
Total power dissipation ^*
Junction temperature
Storage temperature
I_C
30
mA
P_T
125
mW
T_j
125
°C
T_stg −55 to +125 °C
Note) _*: Copper plate at the collector is 5.0 cm² on substrate at 10 mm × 12 mm × 0.8 mm.
1
2
3
(0.35) (0.35)
1.00±0.05
Display at No.1 lead
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Marking Symbol: 6D
Internal Connection
654
Tr1
Tr2
123
■ Electrical Characteristics T_a = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Transition frequency ^*
Forward transfer gain ^*
Noise figure ^*
I_CBO
I_CEO
I_EBO
h_FE
f_T
S_21e²
NF
Collector output capacitance
C_ob
(Common base, input open circuited) ^*
Conditions
V_CB = 9 V, I_E = 0
V_CE = 6 V, I_B = 0
V_EB = 1 V, I_C = 0
V_CE = 3 V, I_C = 15 mA
V_CE = 3 V, I_C = 30 mA, f = 2 GHz
V_CE = 3 V, I_C = 30 mA, f = 2 GHz
V_CE = 3 V, I_C = 15 mA, f = 2 GHz
V_CB = 3 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
1
µA
1
µA
1
µA
100
220

17
GHz
6.0 9.0
dB
1.4 2.0
dB
0.6 0.9
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. _*: Verified by random sampling
Publication date: November 2004
SJC00319BED
1