MSG33001 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – SiGe HBT type For low-noise RF amplifier

Transistors
MSG33001
SiGe HBT type
For low-noise RF amplifier
■ Features
• Compatible between high breakdown voltage and high cutoff fre-
quency
• Low-noise, high-gain amplification
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature package
0.8 mm × 1.2 mm (height 0.52 mm)
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
0.10^{+–00..0025}
Unit: mm
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
9
V
Collector-emitter voltage (Base open) V_CEO
6
V
Emitter-base voltage (Collector open) V_EBO
1
V
Collector current
I_C
30
mA
Collector power dissipation *
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
Note) *: Copper plate at the collector is 5.0 mm² on substrate at 10 mm × 12
mm × 0.8 mm.
Marking Symbol: 5S
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Collector-base cutoff current (Emitter open) I_CBO
Collector-emitter cutoff current (Base open)
I_CEO
Emitter-base cutoff current (Collector open) I_EBO
Forward current transfer ratio
h_FE
Transition frequency
f_T
Forward transfer gain
S_21e²
Noise figure
NF
Collector output capacitance
C_ob
(Common base, input open circuited)
Conditions
V_CB = 9 V, I_E = 0
V_CE = 6 V, I_B = 0
V_EB = 1 V, I_C = 0
V_CE = 3 V, I_C = 3 mA
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CE = 3 V, I_C = 3 mA, f = 2 GHz
V_CB = 3 V, I_E = 0, f = 1 MHz
Min Typ Max Unit
1
nA
1
µA
1
µA
100
220

19
GHz
9.0 11.0
dB
1.4 2.0
dB
0.3 0.6
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
SJC00299BED
1