MIP805 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP805
Silicon MOS IC
s Features
q Output MOSFET with high breakdown voltage for voltage step-up,
EL driver and CMOS control circuits are integrated into one chip.
q Oscillation circuit is incorporated
q EL voltage controlled push-pull drive system achieves higher EL
light intensity. (160V_p-p)
s Applications
q EL drive
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Power supply voltage
Input voltage (ENB)
Output voltage (CIL)
Output voltage (DC)
Output voltage (EL)
−−−−
Output voltage (EL)
V_CC
− 0.5 to 6
V
V_ENB
− 0.5 to V_CC + 0.5
V
V_CIL
− 0.5 to 100
V
V_DC
− 0.5 to 100
V
V_EL
− 0.5 to 100
V
V^{−−−}
EL
− 0.5 to 100
V
Output current (CIL)
−−−−
Output current (EL)
I_CIL
80
mA
I^{−−−}
EL
20
mA
Output current (EL)
I_EL
20
mA
Allowable power dissipation
P_D
Operating ambient temperature T_opr
Operating Junction temperature T_ch
Storage temperature
T_stg
150
mW
−20 to +70
°C
−20 to +125
°C
−55 to +125
°C
s Block Diagram
1
10
5
6
6.3±0.2
4.3±0.2
unit: mm
2 to 12˚
2 to 6˚
1: C_IL 6: R_T1
2: D_C 7: R_T2
3: N_C 8: GND
4: E_L 9: E_NB
5: E_L 10: V_CC
SSONF-10D Package
V_CC
f_OSC R_T1
R_T
R_T2
ENB
L
CIL
f_OSC/4
V_CIL
Oscillation
circuit
D
DC
C
Q NQ
Voltage
control
circuit
EL
EL
EL
GND
1