MIP803 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP803, MIP804
Silicon MOS IC
s Features
q Allowing downsizing of the sets through the reduction of a parts
count resulting from the voltage step-up utilizing a coil instead of
a transformer and employing the thin surface mounting package.
q Allowing low voltage drive (adaptable to a small and low-voltage
battery), or V_CC = 3V or 1.5V drive
q Allowing to adjust the EL light brightness responding to changes in
oscillation frequency which can be changed by the external resistor.
s Applications
q EL drive
s Recommended Set
q Watches, pagers, portable CD players, cellular phones, MD play-
ers, display panels of remote controllers, and etc.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Power supply voltage
Input voltage (ENB)
Output voltage (CIL)
Output voltage (ELD)
V_CC
− 0.5 to 4
V
V_ENB
− 0.5 to V_CC + 0.5
V
V_CIL
− 0.5 to 220
V
V_ELD
− 0.5 to 220
V
Output current (CIL)
I_CIL
60
mA
Output current (ELD)
I_ELD
Allowable power dissipation
P_D
Operating ambient temperature T_opr
Channel temperature
T_ch
Storage temperature
T_stg
120
mA
150
mW
−20 to +70
°C
−20 to +125
°C
−55 to +125
°C
s Block Diagram
EL
1
10
5
6
6.3±0.2
4.3±0.2
unit: mm
2 to 12˚
2 to 6˚
1: GND 6: V_CP
2: GND 7: V_CC
3: C_IL 8: E_NB
4: GND 9: R_T1
5: E_LD 10: R_T2
SSONF-10D Package
V_{CC 7}
+
-
V_{CP 6}
8
ENB
Step-up circuit
Oscillation
circuit
9
R_T1
10
R_T2
CIL
3
ELD
5
T_R1
T_R2
GND
4
Logic circuit
2 ^GND
GND
1
1