MIP713 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP713
Silicon MOS IC
■ Features
• Five protective functions (over-current, over-voltage, short-circuit
load, over heat, ESD) built-in.
• Heat which goes up when load short-circuits is controlled.
• Although it is a small package, it has resistance of low heat. (When
mounted in a substrate.)
• Driving directly from CMOS (microcomputer) is possible.
■ Applications
• For automotive electric equipment
■ Absolute Maximum Ratings
2.90^{+–00..0250}
1.9±0.1
(0.95) (0.95)
4
5
6
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10˚
Parameter
Symbol Rating
Unit
Drain-source voltage
V_DS
− 0.5 to +40
V
Output peak current
I_OP
3.0
A
Output current
Input voltage
Input current
Drain clamp energy ^*1
Power dissipation 1 ^*2
Power dissipation 2 ^*3
Channel temperature
Storage temperature
I_O
1.0
A
V_IN − 0.5 to +6.0
V
I_IN
±2
mA
E_CLP
17
mJ
P_D1
0.2
W
P_D2
0.8
W
T_ch
−40 to +150
°C
T_stg
−55 to +150
°C
Marking Symbol: MA
Note)
*1 : L = 10 mH, IL = 1.84 A, VDD = 20 V 1 pulse, TC = 25°C
*2 : Single unit
*3 : Mounting on the PCB (40 mm², Thick 1.7 mm Glass epoxy substrate)
(T_a = 25°C)
Unit : mm
0.16^{+–00..0160}
1 : Drain
2 : Drain
3 : Source
4 : In
5 : Drain
6 : Drain
Mini6-G1 Package
■ Block Diagram
Drain
2
Over Current
Protection
Short Circuit
Load Protection
In ³
ESD
Protection
Gate Shut Down
Circuit
Over Heat
Protection
Over Voltage
Protection
1
Source
Publication date: July 2003
SLB00064AED
1