MIP708 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP708
Silicon MOS IC
s Features
q 3-pin intelligent power device
q Five protective functions (over-current, over-voltage, short circuit
load, over heat, ESD) built-in
q Acceptable both AC and DC power supply
s Applications
q For lamp and solenoid drive
4.5±0.1
1.6±0.2
45˚
unit: mm
1.5±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Output voltage
V_DS
40
V
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
0.4±0.04
Output peak current
Output current
I_OP
±3
A
I_O
±1
A
321
Input voltage
V_IN
Input current
I_IN
Drain clamp energy
E_CLP
Allowable power Ta = 25°C P_D1
− 0.5 to 6
V
±5
mA
24^*1
mJ
1^*2
W
marking
1: IN
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
dissipation
T_C = 25°C P_D2
2
W
Operating ambient temperature T_opr
−40 to +125
°C
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
*1 _{L = 10mH, IL = 2.19A, VDD = 20V, 1pulse, TC = 25°C}
*2 _{Mounting on the PCB (the copper foil of the drain portion has a area of 100mm}2 _{or more and the thickness of glass epoxy}
board is 1.7mm.)
s Block Diagram
D
Short circuit load
protection
Over voltage
protection
IN
Gate cut-off circuit
ESD
Over heat
protection protection
Over current
protection
S
1