MIP705 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP705
Silicon MOS IC
s Features
q 3-pin intelligent power device
q Five protective functions (over-current, over-voltage, short circuit
load, over heat, ESD) are integrated
q Acceptable both AC and DC power supply
s Applications
q For automotive electric equipment
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Output peak current
Output current
Input voltage
Input current
Drain clamp energy
V_DS
I_OP
I_O
V_IN
I_IN
EAS
60
V
±5
A
−1 to 2^*1
A
− 0.5 to 6
V
±10
mA
55^*2
mJ
Allowable power dissipation P_D
1
W
10^*3
Operating ambient temperature T_opr
−40 to +85
°C
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
*1 _{Maximum load current, not the average current.}
*2 _{L = 10mH, IL = 3.32A, VDD = 30V, 1pulse, TC = 25°C}
*3 _{TC = 25°C}
s Block Diagram
6.5±0.1
5.3±0.1
4.35±0.1
unit: mm
2.3±0.1
0.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
1: IN
2: Drain
3: Source
U Type Package
D
Short circuit load
protection
Over voltage
protection
IN
Gate cut-off circuit
ESD
Over heat
protection protection
Over current
protection
S
1