MIP704 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP704
Silicon MOS IC
s Features
q 3-pin intelligent power device
q Five protective functions (over-current, over-voltage, short circuit
load, over heat, ESD) are integrated
q Acceptable both AC and DC power supply
5.0±0.2
unit: mm
4.0±0.2
s Applications
q For automotive electric equipment
0.7±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
V_DS
60
V
Output peak current
Output current
I_OP
±5
A
I_O
−1 to 2^*1
A
Input voltage
V_IN
− 0.5 to 6
V
Input current
Drain clamp energy
I_IN
EAS
±10
mA
55^*2
mJ
Allowable power dissipation
P_D
1^*3
W
Operating ambient temperature T_opr
−40 to +85
°C
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
*1 _{Maximum load current, not the average current.}
*2 _{L = 10mH, IL = 3.32A, VDD = 30V, 1pulse, TC = 85°C}
*3 _{Mounting on the PCB (Glass epoxy board, the size of 100mm × 100mm). (Ta = 25°C)}
1.27
0.45
+0.15
–0.1
1.27
123
2.54±0.15
0.45
+0.15
–0.1
1: Source
2: Drain
3: IN
TO-92 NL Package
s Block Diagram
D
Short circuit load
protection
Over voltage
protection
IN
Gate cut-off circuit
ESD
Over heat
protection protection
Over current
protection
S
1