MIP516 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon MOSFET type integrated circuit

Intelligent Power Devices (IPDs)
MIP516
Silicon MOSFET type integrated circuit
■ Features
• Built-in five protection functions. (over-current, over-voltage, load-
short-circuit, over heat, ESD)
• Driving directly from CMOS (microcomputer) is possible.
• It is exchangeable easily from a bipolar transistor and MOSFET
• The miniaturized package equipped with three terminals was
adapted.
■ Applications
• Lamp-Solenoid, driver
• Motor driver
■ Absolute Maximum Ratings T_C = 25°C ± 3°C
Parameter
Symbol Rating
Unit
Drain-source voltage
V_DS
− 0.5 to +45
V
Output current
I_O
1.0
A
Input voltage
V_IN − 0.5 to +6.0
V
Input current
I_IN
±2
mA
Drain clamp energy endurance ^*1
E_CLP
13
mJ
Power dissipation 1 ^*2
P_D1
0.2
W
Power dissipation 2 ^*3
P_D2
0.8
W
Operating ambient temperature
T_opr
−40 to +85
°C
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to +150
°C
Note) _*1: L = 10 mH, I_L = 1.61 A, V_DD = 20 V, 1 pulse, T_C = 25°C
*2: ^{Single unit}
*3: Mounting on the PCB (40 mm², thickness 1.7mm glass epoxy
substrate) (T_a = 25°C)
■ Block Diagram
2.90^{+–00..0250}
1.9±0.1
0.95 0.95
4
5
6
Unit : mm
0.16^{+–00..0160}
32
1
0.30^{+–00..0150}
0.50^{+–00..0150}
10°
1 : Drain
2 : Drain
3 : Source
4 : In
5 : Drain
6 : Drain
Mini6-G1 Package
Marking Symbol: MB
Drain
Over-current Load short-circuit
protection
protection
In
Gate cutoff
circuit
ESD protection
Over-heat
protection
Over-voltage
protection
Publication date: August 2003
Source
SLB00059AED
1