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MIP508 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC
Intelligent Power Devices (IPDs)
MIP508
Silicon MOS IC
s Features
q 3-pin intelligent power device
q Five protective functions (over-current, over-voltage, short circuit
load, over heat, ESD) are integrated
q Acceptable both AC and DC power supply
s Applications
q For lamp and solenoid drive
s Absolute Maximum Ratings (Ta = 25°C)
4.5±0.1
1.6±0.2
45˚
unit: mm
1.5±0.1
Parameter
Output voltage
Output peak current
Symbol Ratings
Unit
VDS
40
V
IOP
±3
A
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
0.4±0.04
Output current
TC = 25°C
IO
TC = 85°C
Input voltage
VIN
Input current
IIN
Drain clamp energy
ECLP
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
Ta = 85°C
1
A
1
− 0.5 to 6
V
±5
mA
24*1
mJ
2
1*2
W
0.52*2
321
marking
1: IN
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
Channel temperature
Tch
−40 to +150
°C
Storage temperature
Tstg
−55 to +150
°C
*1 L = 10mH, VDD = 20V, IL = 2.19A, TC = 25°C, 1pulse
*2 Mounting on the PCB (the copper foil of the drain portion should have a area of 100mm2 or more and the board thickness
should be 1.7mm.)
s Block Diagram
D
Short circuit load
protection
Over voltage
protection
IN
Gate cut-off circuit
ESD
Over heat
protection protection
Over current
protection
S
1