MIP501 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP501, MIP502
Silicon MOS IC
s Features
q High breakdown voltage, N-Ch MOS FET output
(V_DSS > 40V R_on < 0.5Ω)
q Over-current-protection function built-in
q Reset function built-in
q Direct drive possible by the logic circuit
s Applications
q Lamp drive
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Symbol
Rating
Unit
Output breakdown voltage
Output peak current
Output current
Input voltage
Input current
Allowable power
dissipation
MIP501
MIP502
V_DSS
40
V
I_OP
5
A
I_OA
1.7
A
V_IN
– 0.5 to 6
V
I_IN
±10
mA
1.5
P_D
1^*
W
Junction temperature
Storage temperature
Operating temperature
T_j
150
˚C
T_stg
– 55 to +150
˚C
T_opr
– 40 to + 85
˚C
* The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only)
s Block Diagram
MIP501, MIP502
MIP501
7.5±0.2
Unit : mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.65±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
123
MIP502
5.0±0.2
0.4±0.1
2.05±0.2
1 : IN
2 : Drain
3 : Source
MT3 Type Package
Unit : mm
4.0±0.2
0.7±0.1
0.45
+0.15
-0.1
0.45
+0.15
-0.1
1.27
1.27
123
2.54±0.15
1 : Source
2 : Drain
3 : IN
TO-92NL Type Package
2
DRAIN
Over voltage
protection circuit
3
IN
Reset circuit
1
SOURCE
Over current
protection circuit