MIP0210SP Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon MOS IC

Intelligent Power Devices (IPDs)
MIP0210SP
Silicon MOS IC
s Features
q Single chip IC with high breakdown voltage power MOS FET and
CMOS control circuits
q Allowing to input worldwide mains (AC 85 to 274V)
q A pulse-by-pulse overcurrent protection circuit and a timer auto-
restart circuit are integrated.
s Applications
q Switching power supply (to 7W)
q AC adaptor
q Battery charger
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter
Symbol Ratings
Unit
Drain voltage
Control voltage
Output current
Control current
Channel temperature
Storage temperature
V_D
700
V
V_C
8
V
I_D
1.25
A
I_C
0.1
mA
T_ch
150
°C
T_stg
−55 to +150
°C
unit: mm
1
8
2
7
3
6
4
5
6.3±0.2
0.6
+0.25
–0.1
7.62±0.25
3 to 15
3.8±0.25 4.0±0.3
1: Source
2: Source
+0.1
0.25 ^–0.05
3: Source
4: Control
5: Drain
6: Source
7: Source
8: Source
DIL-8P Type Package
s Block Diagram
Control pin
Shunt
regulator
-
+
PWM
control current
Max Duty
Clock
Sawtooth
Shutdown/Auto-restart
Auto-restart
Drain pin
+
5.7V
4.7V
-
Power supply ^{Auto-restart current-source}
for internal circuit
1/2
1/2
1/2
R_on X I_D
+
Timer auto-restart circuit
-
Thermal
shutdown
circuit
Restarting
trigger circuit
Q
S
R
Q
Power
MOS FET
Q
S
-
Leading edge
+
R
Q
blanking
R_E
Low pass filter
Minimum ON-time
delay circuit
Source pin
1