MAZZ068H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type

ESD Diodes
MAZZ000H Series
Silicon planar type
For surge absorption circuit
s Features
• Four elements anode-common type
• P_tot = 200 mW
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Total power dissipation^*
Junction temperature
Storage temperature
P_tot
200
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: With a printed circuit board (Four elements in total)
2.0±0.1
(0.65) (0.65)
5
4
Unit: mm
0.7±0.1
123
0.2±0.05
5˚
0.16^{+–00..016}
1: Cathode 1 3: Cathode 2
2: Anode 1, 2 4: Cathode 3
Anode 3, 4 5: Cathode 4
SMini5-F1 Package
Internal Connection
5
4
123
s Common Electrical Characteristics T_a = 25°C ^*1
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage ^*2
V_Z
I_Z
Specified value
V
Zener knee operating resistance
R_ZK
I_Z
Specified value
Refer to the list of the
electrical characteristics
Ω
Zener operating resistance
R_Z
I_Z
Specified value
within part numbers
Ω
Reverse current
I_R
V_R
Specified value
µA
Note) 1. Test method according to the JIS C7031 testing
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *1: The V_Z value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2: Guaranteed at 20 ms after power application.
Publication date: February 2002
SKE00015BED
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