MAZW000H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon planar type For surge absorption circuit

ESD Diodes
MAZW000H Series
Silicon planar type
For surge absorption circuit
■ Features
• Two elements anode-common type
• SSS-Mini type 3-pin package
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Total power dissipation ^*
Junction temperature
Storage temperature
P_tot
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: P_tot = 150 mW achieved with a printed circuit board.
0.33^{+–00..0025}
3
0.23^{+–00..0025}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10^{+–00..0025}
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
SSSMini3-F1 Package
Internally connected circuit
3
1
2
■ Common Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage ^*
Zener rise operating resistance
Zener operating resistance
Reverse current
V_Z
I_Z
Specified value
V
R_ZK
I_Z
Specified value
Refer to the list of the
electrical characteristics
Ω
R_Z
I_Z
Specified value
within part numbers
Ω
I_R
V_R
Specified value
µA
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
ɹ 3. _*: The temperature must be controlled 25°C for V_Z mesurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
V_Z guaranted 20 ms after current flow.
Publication date: 30 June, 2003
SKE00019AED
1