MAZT068H Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – ESD Diodes Silicon planar type

ESD Diodes
MAZT000H Series
Silicon planar type
For surge absorption circuit
s Features
• Two elements anode-common type
• P_tot = 150 mW
s Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Total power dissipation ^*
Junction temperature
Storage temperature
P_tot
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) *: With a printed circuit board
0.28±0.05
3
(0.51)
12
0.28±0.05
(0.51)
(0.80) (0.80)
1.60^{+–00..0035}
3˚
Unit: mm
0.12^{+–00..0025}
0.60^{+–00..0035}
EIAJ: SC-89
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
SSMini3-F2 Package
Internal Connection
3
1
2
s Common Electrical Characteristics T_a = 25°C ^*1
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage^*2
V_Z
I_Z
Specified value
V
Zener knee operating resistance
R_ZK
I_Z
Specified value
Refer to the list of the
electrical characteristics
Ω
Zener operating resistance
R_Z
I_Z
Specified value
within part numbers
Ω
Reverse current
I_R
V_R
Specified value
µA
Note) 1. Test method according to the JIS C7031 testing
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
ɹ 3. _*1: The V_Z value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
*2: ^{Guaranteed at 20 ms after power application.}
Publication date: February 2002
SKE00013BED
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