MAZT068 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – ESD Diodes Silicon planar type

ESD Diodes
MAZTxxxH Series
Silicon planar type
For surge absorption circuit
■ Features
• Two elements anode-common type
• Power dissipation P_D : 150 mW
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Power dissipation ^*
Junction temperature
Storage temperature
P_D
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: P_D = 150 mW achieved with a printed circuit board.
0.28±0.05
3
(0.51)
12
0.28±0.05
(0.51)
(0.80) (0.80)
1.60^{+–00..0035}
3˚
Unit: mm
0.12^{+–00..0025}
0.60^{+–00..0035}
EIAJ: SC-81
1: Cathode 1
2: Cathode 2
3: Anode
SSMini3-F2 Package
Internal Connection
3
1
2
■ Common Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage^*
V_Z
I_Z
Specified value
V
Zener rise operating resistance
R_ZK
I_Z
Specified value
Refer to the list of the
electrical characteristics
Ω
Zener operating resistance
R_Z
I_Z
Specified value
within part numbers
Ω
Reverse current
I_R
V_R
Specified value
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V_Z mesurement.
V_Z value measured at other temperature must be adjusted to V_Z (25°C)
V_Z guaranted 20 ms after current flow.
Publication date: November 2004
SKE00013DED
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